| PART |
Description |
Maker |
| 2SJ296 2SJ296S 2SJ296L |
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 15A I(D) | TO-263AB
Silicon P-Channel MOS FET(P沟道MOSFET) 硅P沟道场效应晶体管性（P沟道MOSFET的）
|
Hitachi,Ltd.
|
| SFR9034 SFU9034 SFR9034TF SFU9034TU |
60V P-Channel A-FET
Advanced Power MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| MSN0612W |
60V(D-S) N-Channel Enhancement Mode Power MOS FET
|
MORE Semiconductor Comp...
|
| MSN0675D MSN0675D-TO220-3L |
60V(D-S) N-Channel Enhancement Mode Power MOS FET
|
MORE Semiconductor Comp...
|
| RJF0612DPE-00-J3 |
60V - 50A - N Channel Thermal FET Power Switching
|
Renesas Electronics Corporation
|
| MSC0605W |
60V(D-S) Dual N-Channel Enhancement Mode Power MOS FET
|
MORE Semiconductor Comp...
|
| SFR9014 SFR_U9014 SFRU9014 SFU9014 U9014 SFU9014TU |
60V P-Channel A-FET / Substitute of IRFR9014
Advanced Power MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| RJK0629DPE RJK0629DPE-15 |
60V, 85A, 4.5m max. N Channel Power MOS FET High-Speed Switching Use
|
Renesas Electronics Corporation
|
| TP0606 |
P-Channel Enhancement-Mode Vertical DMOS FET(击穿电压-60V，低门限2.4V，P沟道增强型垂直DMOS结构场效应管) P通道增强模式垂直的DMOS场效应管（击穿电 60V的低门限.4V，P沟道增强型垂直的DMOS结构场效应管
|
Elan Microelectronics, Corp.
|
| IRFI064 IRFI064-15 |
Simple Drive Requirements
TRANSISTOR N-CHANNEL(Vdss=60V/ Rds(on)=0.017ohm/ Id=45A*)
TRANSISTOR N-CHANNEL(Vdss=60V, Rds(on)=0.017ohm, Id=45A*)
60V Single N-Channel Hi-Rel MOSFET in a TO-259AA package
|
International Rectifier
|
| PHD16N03LT |
N-channel TrenchMOS?/a> logic level FET
N-channel Trenchmos (tm) logic level FET
N-channel TrenchMOS⑩ logic level FET
From old datasheet system
N-channel TrenchMOSlogic level FET 16 A, 30 V, 0.067 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
